Abstract
The controlled growth of Zn-polar ZnO films on Al-terminatedα-Al2O3 (0001) substrates is investigated by theradio-frequency plasma-assisted molecular beam epitaxy method. Prior tothe growth, α-Al2O3 (0001) surface is modified by anultrathin MgO layer, which serves as a uniform template for epitaxy ofZn-polar ZnO films. The microstructures of ZnO/MgO/Al2O3interface are investigated by in-situ reflection high-energyelectron diffraction observations and ex-situ high-resolutiontransmission electron microscopy characterization. It is found thatunder Mg-rich condition, the achievement of the wurtzite MgO ultrathinlayer plays a key role in the subsequent growth of Zn-polar ZnO. Aninterfacial atomic model is proposed to explain the mechanism ofpolarity selection of both MgO and ZnO films.
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