Abstract
Morphology and crystallographic properties of two-dimensional ZnO nanowalls epitaxially grown on catalytic Au-deposited GaN/c-plane sapphire substrates in a thermal chemical vapor deposition process were studied as a function of growth temperature. Vertically well-aligned ZnO nanowall networks with di erent wall size and morphology were formed at 880, 900 and 920 C, respectively. We observed that the ZnO nanowall networks were of a single-crystalline structure and showed a perfect epitaxial relation with the catalytic Au and the GaN substrate in high-resolution electron microscopy and synchrotron X-ray scattering experiments. It was found that the crystal quality of ZnO nanowall and catalytic Au was improved with increasing growth temperature in X-ray powder di raction measurements. The room-temperature photoluminescence spectrum showed a quite strong and sharp ultraviolet emission as well as relatively weak deep-level emission, indicating good optical properties of the ZnO nanowall samples in this work.
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