Abstract
Ni-catalyzed Si-based heterostructure nanowires grown on crystal Si substrates by hot-wire chemical vapor deposition (HWCVD) were studied. The nanowires which included NiSi nanowires, NiSi/Si core-shell nanowires, and NiSi/SiC core-shell nanowires were grown by varying the filament temperature Tf from 1150 to 1850 °C. At a Tf of 1450 °C, the heterostructure nanowires were formed by crystalline NiSi and crystalline Si that were attributed to the core and shell of the nanowires, respectively. The morphology of the nanowires showed significant changes with the increase in the filament temperature to 1850 °C. Moreover, the effect of hydrogen heat transfer from the filament temperature demonstrated significant phase changes from NiSi to Ni2Si with increase in the filament temperature. The increased filament temperature also enhanced reactions in the gas phase thus generating more SiC clusters and consequently formed the NiSi/SiC heterostructure core-shell nanowires at Tf of 1850 °C. This paper discusses the role of filament temperatures on the growth and constituted phase change of the nanowires as well as their electrical characteristics.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-015-0980-6) contains supplementary material, which is available to authorized users.
Highlights
Semiconductor nanowires have been extensively investigated due to their potential applications in a wide range of optical and electrical applications [1,2,3]
This study examines the role of the filament temperature on the growth of different morphologies of the nanowires by hot-wire chemical vapor deposition (HWCVD)
Different types of Si-based heterostructure nanowires were grown by HWCVD at different filament temperatures, and their morphological, structural, and electrical properties are presented in this study
Summary
Semiconductor nanowires have been extensively investigated due to their potential applications in a wide range of optical and electrical applications [1,2,3]. The hybrid heterostructures such as core-shell nanowires tend to improve the properties of the nanowires in the application of high-temperature sensing [4] and high-performance field-effect transistors [5] and the enhancement of hydrogen generation efficiency in visible photocatalytic processes [6].
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