Controlled Growth of Semiconducting and Metallic Single-Wall Carbon Nanotubes.

Abstract

Single-wall carbon nanotubes (SWCNTs) can be either semiconducting or metallic depending on their chiral angles and diameters. The use of SWCNTs in electronics has long been hindered by the fact that the as-prepared SWCNTs are usually a mixture of semiconducting and metallic ones. Therefore, controlled synthesis of SWCNTs with a uniform electrical type or even predefined chirality has been a focus of carbon nanotube research in recent years. In this Perspective, we summarize recent progress on the controlled growth of semiconducting and metallic SWCNTs by in situ selective etching and by novel catalyst design. The advantages and mechanisms of these approaches are analyzed, and the challenges are discussed. Finally, we predict possible breakthroughs and future trends in the controlled synthesis and applications of SWCNTs.