Abstract
Monolayer MoS2 in triangular configurations with rich edges or high-quality uniform films are either catalytically active for the hydrogen evolution reaction or flexible for functional electronic and optoelectronic devices. Here, we have experimentally discovered that these two types of MoS2 products can be selectively synthesized on graphene or sapphire substrates, which are associated with both different adsorption energy and diffusion-energy barrier for vapor precursors during growth. Our study not only provides insights into the on-surface synthesis of high-quality MoS2 monolayers, but also can be applied to the growth of vertically-stacked and large-scale in-plane lateral MoS2–graphene heterostructures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
