Abstract
Abstract Cuprate whiskers with different crystal phases, Bi2Sr2CuOx (Bi-2201) and Bi4Sr8Cu5Ox (Bi-485), have been obtained by heating melt-quenched glass precursors. The crystal phase of the grown whiskers were controllable by changing the precursor composition and heating conditions. The Bi-2201 whiskers were identified to be of the R-phase, written in a general formula as Bi2+xSr2−xCuOy. The hole concentration of the as-grown Bi-2201 whiskers was also controlled from the underdoped to the overdoped state by changing the precursor composition. The temperature dependence of resistivity changed from a semiconducting to a metallic behavior corresponding to the hole concentration.
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