Abstract
Epitaxial CdS films were grown on the (111) face of ZnS by the close-spaced technique. A new method to control the film conductivity is proposed. The conductivity control of the films was obtained by introducing S vacancies into the films. The layers have very smooth surfaces and good electronic characteristics. The carrier concentration ranged from 1016 to 1017 cm-3 and a maximum electron mobility of 296 cm2/V.sec at room temperature was obtained in a 10 µm thick film. Current oscillations were observed by applying a high electric field, and it was shown that these oscillations accompanied the acoustoelectric surface wave domains. The central frequency of the surface waves was about 1 GHz and its power was about 43 mW/mm. It is shown that the epitaxial CdS films thus obtained have good crystalline characteristics to amplify the surface acoustic waves. These films are expected to find an important application as light modulators in optical integrated circuits.
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