Controlled arsenic diffusion in epitaxial Cd xHg 1− xTe layers in the evaporation–condensation–diffusion process

Abstract

The results of controlled doping of Cd x Hg 1− x Te epitaxial layers are presented. The investigated layers were obtained by the evaporation–condensation–diffusion method in the process of isothermal growth. The process of auto diffusion from the solid phase was investigated. This process consists in the diffusion of As dopants from CdTe substrate into the grown epitaxial layer. Two types of CdTe substrates, uniformly doped in the process of synthesis and unalloyed with ion implanted surface layer, have been used as sources of As diffusant. Comparative analysis of galvanomagnetic measurements and SIMS spectra was carried out. The results of investigations indicate the very high, almost 100%, electrical activity of As dopants in the Cd x Hg 1− x Te epitaxial grown layer.