Abstract
The evolution of the morphology of the vicinal GaAs (001) surface induced by Si deposition was studied by scanning tunneling microscopy. The observed step bunching is accompanied by a spatial separation of surface phases with different Si coverages on terraces and in step regions. The spacing and height of the bunches depend on the substrate temperature. A model is proposed to account for these effects by considering a kinetic pathway of the surface to an accessible lowest energy state.
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