Abstract
We report on controlled p-type doping of GaAs nanowires grown by metal-organic vapor-phase epitaxy on (111)B GaAs substrates using the vapor-liquid-solid growth mode. p-type doping of GaAs nanowires was realized by an additional diethyl zinc flow during the growth. Compared to nominally undoped structures, the current increases by more than six orders of magnitude. The transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices proved p-type conductivity. By adjusting the II/III ratio, controlled doping concentrations from 4.6×1018 up to 2.3×1019 cm−3 could be achieved at a growth temperature of 400 °C. The doping concentrations were estimated from electrical conductivity measurements applied to single nanowires with different diameters. This estimation is based on a mobility versus carrier concentration model with surface depletion included.
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