Abstract
To meet the low energy consumption requirement of the Internet of things, there is an eagerness for 2D gas sensors to realize the ultralow-power or self-powered sensing at room temperature. Here, we demonstrate the controllable Oxygen-doping of SnS2/G heterostructure as a diode-type gas sensor with excellent and robust performances. The oxygen substitution controlled by ion irradiation modifies the homogeneous SnS2/G heterostructure into a heterogeneous SnS2-0.22O0.22/G-SnS2/G. The boundary of SnS2-0.22O0.22/G-SnS2/G forms a lateral Schottky junction, which outputs a stable open-circuit voltage of 1.5 V under the indoor light illumination. Adsorbed with gas molecules, the SnS2-0.22O0.22/G-SnS2/G junction has the variation of the photoconductance instead of the build-in electric field, ensuring the linear response to the gas concentration. This diode-type gas sensor exhibits long-term stability for at least 50 days (50th−100th day) and has an ultrafast gas-sensing performance with a response/recovery time of ∼54 s/9.2 s. Besides, it exhibits high selectivity to NO2 (42.8%) compared to gas species of H2S (0.6%), SO2 (7.8%), and NH3 (0%), based on different sensitivities. This work presents controllable oxygen doping as a novel avenue for preparing extremely energy-efficient sensors with fast response/recovery, linear response, and robust performances catering to future ubiquitous and real-time sensing requirements.
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