Controllable Modulation to Quantum Well States on β-Sn IslandsSupported by the National Natural Science Foundation of China (Grant Nos. 11521404, 11634009, 11674222, 11674226, 11790313, 11574202, 11874256, U1632102, 11861161003 and 11874258), the National Key Research and Development Program of China (Grant Nos. 2016YFA0300403 and 2016YFA0301003), the Key Research Program of the Chinese Academy of Sciences (Grant No. XDPB08-2), the Strategic Priority

Abstract

We investigate the surface structure and electronic properties of β-Sn islands deposited on a graphitized 6H-SiC (0001) substrate via low temperature scanning tunneling microscopy and spectroscopy. Owing to the confinement of the island geometry, quantum well states (QWSs) are formed, manifesting as equidistant peaks in the tunneling spectra. Furthermore, a distinct strip feature appears on the surfaces of odd-layer Sn islands, ranging from 15–19 layers, which is not present on the surfaces of even-layer Sn islands. The spatial distribution of strips can be modified by applying a bias pulse, using an STM tip. Furthermore, the strip-like structure shows significant impacts on the QWS. An energy splitting of the lowest unoccupied QWSs is observed in strip regions; this may be ascribed to caused the phase shift of the wave functions of the QWSs on the top surface, due to surface distortions created by the aforementioned strips.