Abstract
A magnetoresistance device was proposed by patterning two asymmetric ferromagnetic stripes on top and bottom of the GaAs/AlxGa1-xAs heterostructure. To control its performance, a tunable δ-potential is introduced inside this device by wire-like doping. Adopting transfer matrix method and Landauer-Büttiker conductance theory, Schrödinger equation is solved analytically and δ-doping dependent transmission, conductance and magnetoresistance ratio are calculated. An obvious magnetoresistance effect still stays in this device, due to existence of transmission difference between parallel and antiparallel configurations independent of δ-doping. However, its magnetoresistance ratio can be tuned by changing weight or position of δ-doping. These interesting results not only propose an alternative scheme to manipulate magnetoresistance device, but also a structurally-controllable magnetoresistance device can be obtained for magnetic information storage.
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