Abstract
Manganites thin films grown on ferroelectric BaTiO3 (BTO) exhibit dramatic jumps for both magnetization and resistivity upon cooling in accordance with the temperature-dependent structural transitions of the BTO substrate. Both upward and downward jumps have been reported at the same temperature point where BTO undergoes a structural transition from monoclinic to rhombohedral. Using La5/8Ca3/8MnO3/BaTiO3 as protype system, we solve the puzzle by showing that the direction of the jumps can be controlled by applying an electric field during post growth cooling which determines the orientation of the c-axis of the BTO substrate at room temperature. This offers a convenient way to control the magnetic and transport behavior of manganites films using electric field.
Highlights
Manganites thin films grown on ferroelectric BaTiO3 (BTO) exhibit dramatic jumps for both magnetization and resistivity upon cooling in accordance with the temperature-dependent structural transitions of the BTO substrate
Using La5/8Ca3/8MnO3/BaTiO3 as protype system, we solve the puzzle by showing that the direction of the jumps can be controlled by applying an electric field during post growth cooling which determines the orientation of the c-axis of the BTO substrate at room temperature
The magnetization jump becomes especially interesting for the La1−xSrxMnO3 (LSMO) and La1−xCaxMnO3 (LCMO) thin films grown on BTO substrate since it gives rise to a giant and reversible magnetocaloric effect
Summary
Controllable magnetization and resistivity jumps of manganite thin films on BaTiO3 substrate Manganites thin films grown on ferroelectric BaTiO3 (BTO) exhibit dramatic jumps for both magnetization and resistivity upon cooling in accordance with the temperature-dependent structural transitions of the BTO substrate.
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