Abstract
The iodide interplay with polar Zn2+ and O2− induced nonpolar [101¯0] ZnO nanowires is fabricated via a simple vapor phase transport at a temperature of as low as 250 °C that is compatible with the nanodevice processing technique. As-fabricated nanowires exhibit single crystalline hexagonal wurtzite structures and grow along the [101¯0] direction instead of the conventional polar [0001] direction. The growth evolution can be explained by the synergy of the vapor–liquid–solid process and iodide direction-modulation. The electrical measurements demonstrate that the mobility of the PbI2-induced [101¯0] nanowires is significantly improved in comparison with that of the BiI3-modulated [112¯0] ones. These unique nonpolar nanowires are promising for improved high efficiency nanodevices.
Highlights
In this paper, ZnO NWs grown along the nonpolar [101 ̄0] direction were obtained by a vapor phase transport (VPT) around 250 ○C in the presence of the starting material, lead iodide
The iodide interplay with polar Zn2+ and O2− induced nonpolar [101 ̄0] ZnO nanowires is fabricated via a simple vapor phase transport at a temperature of as low as 250 ○C that is compatible with the nanodevice processing technique
Iodide has been touted to impact on the growth directions and morphologies of nanostructures such as Au nanoprisms and nanorods9 because of deeply polarizable I− and I2.10 some work has been done using iodides such as BiI3,9,11 the controllable and high yield fabrication of lateral nonpolar ZnO NWs in a low temperature VPT is greatly intriguing
Summary
ZnO NWs grown along the nonpolar [101 ̄0] direction were obtained by a VPT around 250 ○C in the presence of the starting material, lead iodide. The iodide interplay with polar Zn2+ and O2− induced nonpolar [101 ̄0] ZnO nanowires is fabricated via a simple vapor phase transport at a temperature of as low as 250 ○C that is compatible with the nanodevice processing technique.
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