Controllable growth of multilayered XSe2 (X = W and Mo) for nonlinear optical and optoelectronic applications

Abstract

The layered transition metal dichalcogenides (TMDs) exhibit the intriguing physical properties and potential application in novel electronic devices. However, controllable growth of multilayer TMDs remains challenging. Herein, large-scale and high-quality multilayer prototype TMDs of W(Mo)Se2 were synthesized via chemical vapor deposition. For Raman and photoluminescence measurements, 2H and 3R multilayer WSe2 crystals displayed significant layer-dependent peak position and intensity feature. Besides, different from the oscillatory relationship of second harmonic generation (SHG) intensity for odd–even layer numbers in 2H-stacked multilayer WSe2, the SHG intensity of 3R-stacked ones parabolically increased with the thickness due to the absence of inversion symmetry. For device application, photodetectors based on WSe2 with increasing thickness exhibited p-type (bilayer), ambipolar (trilayer), and n-type (four layers) semiconductor behaviors, respectively. Furthermore, photodetectors based on the as-synthesized 3R-stacked WSe2 flakes displayed an excellent responsivity of 7.8 × 103 mA W−1, high specific detectivity (Da*) of 1.7 × 1014 Jones, outstanding external quantum efficiency of 8.6 × 102%, and fast response time (τ Rise = 57 ms and τ Fall = 53 ms) under 532 nm illumination with bias voltage of V ds = 5 V. Similar results have also been achieved in multilayer MoSe2 crystals. All these findings indicate great potential of 3R-stacked TMDs in two-dimensional optoelectronic applications.