Controllable Growth of Large-Scale Continuous ReS2 Atomic Layers

Abstract

In recent years, two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have received significant attention due to their exceptional electrical and optical properties. Among these 2D materials, ReS2 distinguishes itself through its unique optical and conductance anisotropy. Despite concerted efforts to produce high-quality ReS2, the unique interlayer decoupling properties pose substantial challenges in growing large-area ReS2 thin films, with the preparation of single layers proving even more complex. In this work, large-scale continuous monolayer and bilayer ReS2 films were successfully grown on mica substrates using low-pressure chemical vapor deposition (LPCVD). Photodetectors were fabricated using the prepared high-quality ReS2 films, and the devices presented stable photoresponse and enhanced response sensitivity. The production of continuous ReS2 atomic layers heralds promising prospects for large-scale integrated circuits and advances the practical application of optoelectronics based on 2D layered materials.