Abstract
AbstractIn this paper, the controllable growth of graphene and their field emission properties were studied. Two different Fe‐Ni‐Cr layers were deposited by magnetron sputtering of stainless target on ceramic substrate. One was deposited at temperature of 300 °C, the other was deposited at room temperature. The catalyst‐coated substrates were placed in a microwave plasma chemical vapor deposition (MPCVD) reaction chamber. The source gas was a mixture of H2 and CH4. Under the same MPCVD experiment conditions, the CNTs and graphene films were obtained on the two catalyst layers respectively, which indicated the microstructure of catalyst was a key factor in controllable growth of graphene. The turn‐on field of the field emission from the graphene film was 1.26 V/μm, and the current density of 2.1 mA/cm2 at electric field of 2.2 V/μm was obtained. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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