Abstract
The niobium oxide insulator-metal transition selector device is considered to be a rectifying device with great potential. However, the lack of research on the experimental parameters and the complex physical mechanism of the NbO2 device seriously affected its development. In this article, a controllable intermediate functional layer of NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> was reported in the Pt/NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /TiN device subjected to different forming compliance currents (FCCs) and compliance currents (CCs). The different FCCs and CCs changed the size of the Nb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> and NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layers within the NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> layer, which further affected the threshold voltage. The result helped to realize the control of the NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> functional layer, which was also of great significance for the adjustment of the experimental parameters in the preparation experiment according to the required performance. Furthermore, the I-V characteristics and switching times at different ambient temperatures were carried out, showing the specific dependency of the device on temperature. Between them, the simulated switching time of 2 ns at room temperature proved that the selector had a great application prospect in high speed and high-density storage or logic switch. Generally, the whole research helped to improve the control of the interlayer structure and the performance of the device for application in 3-D crossbar arrays, and provided a valid model to study the device.
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