Abstract
We investigated the optical, electrical, and thermal properties of Zn-doped Sb4Te films for application in phase change memory. Together with well-documented results of Zn-doped Sb2Te3, Sb2Te, Sb7Te3, and Sb3Te systems, we plotted the ternary amorphous-phase forming-region of Zn-Sb-Te. Zn-doping increased the crystallization temperature and data retention ability of Sb4Te films. We identified the optimal composition as Zn28.6(Sb4Te)71.4, which presents reversible optical performance between the amorphous and crystalline states. The minimum time for onset crystallization was 15 ns and the required pulse width for complete crystallization was 165 ns at 70 mW. Furthermore, in all of the Zn-doped Sb-Te films, it was confirmed that Zn-doping can effectively control the growth of nano-crystalline grains and allows only a single phase to form during crystallization.
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