Controllable fabrication of homogeneous ZnO p-n junction with enhanced charge separation for efficient photocatalysis

Abstract

Construction of junctions between semiconductors is an effective way to promote charge separation and thus improve the photoelectrochemical and photocatalytic performance. Specifically, p-n homojunctions are more efficient due to the larger driving force and lower transfer barrier over the interface. Herein, we fabricated ZnO p-n homojunctions by depositing n-type ZnO nanoparticles (with oxygen vacancy) on the surface of p-type ZnO (with metal vacancy). The structures of the composite were well characterized by TEM, XRD, TG, XPS and EPR analyses. Meanwhile, both the “V-shaped” Mott-Schottky plots and anodic shift of onset potentials confirmed the existence of p-n homojunction, which exhibits much more efficient charge transfer and separation than pure type ZnO as indicated by PL and EIS measurements. As a result, p-n homojunction exhibited activity of 3.2-fold and 3.3-fold higher than pure p-ZnO in photodegradation of phenol and as photocathode in photoelectrochemical water splitting, respectively. This work provides a new strategy for the design and fabrication of highly efficient photocatalysts with promoted charge separation.