Abstract
Selective growth of aligned carbon nanotubes (CNTs) at low temperature by pulsed plasma on Si 3N 4/Si substrates patterned by metallic platinum has been demonstrated. Field emission and atomic force microscopy (AFM) have shown that platinum does not support CNT growth, so that nanotubes can selectively grow on substrates patterned by platinum. This feasible fabrication method has been used to measure the electrical resistivity of as-aligned CNT film perpendicular to the tube axis without a complex postsynthesis manipulation. The prepared samples show a monotonic decrease in the resistivity with increasing temperature. We propose that the transport is governed by the formation of crossed junctions of nanotubes in the mat.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
