Controllable Corrosion and Electrochemical Nanoimprint

Abstract

When the contact potential field between the metal catalyst and semiconductor were exposure to the electrolyte environment, a primary corrosion cell would be formed. The corrosion processes are controllble and going strictly along the metal/semiconductor/electroyte three-phase boundaries. Once the metal were seperated from the semiconductor with the corrosion going on, the corrosion would be ceased. In this way, the corrosion processes are well controlled in the scale of Debye-length of the space charge at the metal/semiconductor boundaries. Baseed on this corrosion principle, electrochemical nanoimprint was developed as a very competitive nanoimprint method to fabricate the functional micro-/nano-structures on semiconductor wafers such as Si, GaAs and other III-V semiconductors. Electrochemical nanoinprint are free of thermalplastic or photocuring resists, mold-filling and demolding processes. It can make micro-/nano-structures directly on semiconductor wafers with high efficiency and low cost. Furthermore, the machining processes can be accelerated by the external physical fields, such as electric filed, light field and force field. In this talk, we will give a comphrehensive report on our recent advances in electrochemical nanoimprint.