Abstract
Air-stable bismuth oxychalcogenides (Bi2O2X) have exhibited exceptional electrical properties and ultrahigh mobility in high-performance electronic devices. However, although Bi2O2Se is commonly used, there have been few reported uses of Bi2O2Te because of its challenging preparation process. This study aimed to synthesize two-dimensional Bi2O2Te nanosheets using the chemical vapor deposition method. Bi2O2Te nanosheets with different thicknesses were obtained by adjusting the growth conditions, such as temperature. The as-prepared Bi2O2Te single crystal exhibited a Hall mobility of 496 cm2 V-1 s-1 at 300 K, which reached 5000 cm2 V-1 s-1 at 2 K. The results expand the Bi2O2X family and show Bi2O2Te to be a promising candidate for use in highly efficient electronic devices.
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