Abstract
In order to increase the resistive switching performance of memory devices based on TiN electrode, it is desirable to fabricate TiN with good oxygen reservoir ability. In the present paper, we report that the crystallized (200) textured TiN electrode were achieved by epitaxial grown on CrRu intermediate layer, which had better oxygen reservoir ability than the amorphous TiN. It is found that the Pt/HfO2/TiN devices with crystallized TiN electrode exhibited a typical bipolar resistive switching behavior, while the I-V curves of the Pt/HfO2/TiN devices with amorphous TiN electrode showed the unipolar resistive switching behavior regardless of voltage polarity, which is similar to the Pt/HfO2/Pt devices. It is believed that this originates from the different oxygen reservoir ability of TiN with different fabricating process. Moreover, the RRAM device with the new structure of TiN (amorphous)/HfO2/TiN (crystallized) exhibited the bipolar resistive switching behavior. This further proved the amorphous TiN electrode had poorer ability of oxygen reservoir than crystallized TiN, which was similar to a noble electrode like Pt electrode. Tuning the resistive switching behaviors of RRAM devices by controlling the crystalline state of TiN electrode may offer a method for fabrication of transition metal oxides based RRAM device with good performances.
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