Abstract
The control system for near-atomic thin films deposition is disclosed. The system is consisting of three parts: vapor pressure control, film conductivity control and stepwise coverage control. All three subsystems are explored experimentally and found to have the sufficient potential to give improved repeatability of deposition of near-atomic thin films. The results and conclusions from stepwise coverage experiments, followed by AFM and XPS analysis is presented as an evidence of direct relationship between the in-situ recorded voltage pattern and the film formation stages. Ill. 6, bibl. 10 (in English; abstracts in English, Russian and Lithuanian).
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