Control over the preferred orientation of CIGS films deposited by magnetron sputtering using a wetting layer

Abstract

A growth method is presented to control the preferred orientation in chalcopyrite CuIn x Ga1-x Se2 (CIGS) thin films grown by magnetron sputtering. Films with (220/204) and (112) preferred orientation as well as randomly oriented films were prepared. The effects of an In2Se3 wetting layer and the working pressure on the texture transition phenomena were examined. A large-grained CIGS film with (220/204) texture was formed at 400°C with the inclusion of a thin (80 nm) In2Se3 layer and liquid phase (excess copper selenide phase) formation, and the reaction mechanism is proposed. The device deposited at 2.0 Pa on an In2Se3 layer exhibited the optimal electrical properties.