Abstract
Solution-processed colloidal quantum dots (CQDs) are promising materials for photodetectors operating in the short-wavelength infrared region (SWIR). Devices typically rely on CQD-based hole transport layers (HTL), such as CQDs treated using 1,2-ethanedithiol. Herein, we find that these HTL materials exhibit low carrier mobility, limiting the photodiode response speed. We develop instead inverted (p-i-n) SWIR photodetectors operating at 1370 nm, employing NiOx as the HTL, ultimately enabling 4× shorter fall times in photodiodes (∼800 ns for EDT and ∼200 ns for NiOx). Optoelectronic simulations reveal that the high carrier mobility of NiOx enhances the electric field in the active layer, decreasing the overall transport time and increasing photodetector response time.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.