Abstract
We have fabricated silicon nanocrystals with different dimensions by the thermal annealing and thermal oxidation of ultrathin hydrogenated amorphous silicon (a-Si:H) films (2–10nm) deposited by thermal chemical vapor deposition. Dimensions of silicon nanodots are the function of thickness of the ultrathin a-Si:H film. Therefore, we can change the dimensions of silicon nanodots (3–10nm) by varying the a-Si:H film thickness according to our requirements. From our experimental studies, we have drawn a calibration curve of required a-Si:H film thickness against the average dimension of fabricated crystalline grains.
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