Abstract
The effect of doping concentrations and a transverse external magnetostatic field on operational characteristics of parametric amplification of backward Stokes signal has been studied, using hydrodynamic model of semiconductors, in the far infrared regime. The model suggests three achievable resonance conditions: (i) lattice frequency and plasma frequency (ii) stokes frequency and electron-cyclotron frequency (iii) stokes frequency and hybrid (plasma and electron-cyclotron) frequency and these conditions have been utilised, on one hand, to substantially reduce the value of threshold intensity for onset of the parametric amplification and on the other hand, for switching of parametric large positive and negative gain coefficient (i.e. amplification and absorption). For example a strong transverse magnetostatic field 10.0 T with free carrier concentration 1.5 x 1019m-3 enhances the gain by a factor of 103 as in its absence. Results also suggest that a weakly piezoelectric III–V semiconductor duly illuminated by slightly off-resonant not-too-high-power pulsed lasers with pulse duration sufficiently larger than the acoustic phonon lifetime is one of promising hosts for parametric amplifier/frequency converter.
Highlights
The area of parametric interactions and their devices such as optical parametric amplifiers and oscillators (OPA/ OPO) occupies a special place in nonlinear optics due to their potential applications
The results indicate that the threshold condition and parametric gain can be manipulated by varying doping concentration, magnetostatic field and excitation intensity
A comparison of the results obtained from Equation (12a) and (12b) reveal that the required minimum Ipth for the onset of parametric amplification due to parametric coupling of piezoelectric coefficient and pump electric field is nearly 100 times higher than the value obtained due to solely piezoelectricity
Summary
The area of parametric interactions and their devices such as optical parametric amplifiers and oscillators (OPA/ OPO) occupies a special place in nonlinear optics due to their potential applications. In order to design and develop efficient parametric amplifiers/oscillators, different types of nonlinear materials have been used [10,11]. It is well known that the manipulation of threshold condition and gain are important issues to improve the efficiency and functionality of parametric devices (e.g. amplifiers, oscillators and frequency converters). Of-late authors have made systematic attempt to explore the influence of free carrier concentration, externally applied magnetostatic field and excitation intensity on second order susceptibility of weakly piezoelectric n-type III–V semiconductors [20]. The model [20] has been further extended to study operational characteristic of parametric amplification and explore the possibility of switching of optical nonlinearity by applied magnetostatic field. The results indicate that the threshold condition and parametric gain can be manipulated by varying doping concentration, magnetostatic field and excitation intensity
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