Abstract

We succeeded in fabricating intrinsic Josephson junctions using Bi2Sr2CaCu2O8+δ (Bi-2212) thin films by means of a two-step annealing procedure. By this method, the grain size changed over the range of 0.02~5 μ m in diameter and the critical temperature could be controlled in the range from 73K to 85K. We fabricated a mesa structure 10 X 10 μ m2 in area using annealed Bi-2212 thin films and measured electrical properties along the c-axis. The temperature dependence of the resistivity of the mesa above T c was semiconductor-like. The current-voltage (I-V) characteristics exhibited clear hystereses and multiple branches, and the observed voltage jumps were between 3mV and 20mV. Furthermore, the critical current was modulated by a magnetic field.

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