Abstract
The standard method for the control of the electrodeposition of CdTe thin films for photovoltaic applications is by monitoring the quasi-rest potential (QRP). The importance of the QRP has been tested by depositing CdTe onto tindoped indium oxide (ITO)/CdS substrates over a range of QRPs from –0.20 to –0.65 V vs. Ag/AgCl, covering the observed potential range over which CdTe deposition occurs. The effect of the QRP on the performance of the CdS/CdTe solar cells was assessed in terms of the structural and morphological properties of the CdTe films, in addition to the photovoltaic properties of the final devices. The value of the QRP during deposition appeared to exert no influence on any of the measured parameters. In contrast, the deposition of high-quality CdTe occurred at a relatively constant applied potential, confirming experimentally for the first time the influence of the predicted potential of perfect stoichiometry in compound semiconductor electrodeposition.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
