Abstract
The possibilities of determining the impurities and basic components of lanthanum gallium silicate using laser ablation in combination with inductively coupled plasma mass spectrometry (LA-ICP-MS) were shown. A procedure for the determination of 54 impurity elements with the limits of determination from n × 10−5 wt % for Mg, Ti, V, Cr, Mn, Ni, Cu, and Zn to 2 × 10−7 wt % for U and also a procedure for the determination of a ratio between basic components were developed. It was found that the concentration ratios between gallium and lanthanum and silicon and lanthanum in the crystals of lanthanum gallium silicate remained constant upon consecutive melting operations with the addition of a charge mixture to the crucible.
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