Abstract

Graphene, which is a two-dimensional crystal of carbon atoms arranged in a hexagonal lattice, has attracted a great amount of attention due to its outstanding mechanical, thermal and electronic properties. Moreover, graphene shows an exceptionally strong tunable light-matter interaction that depends on the Fermi level - a function of chemical doping and external gate voltage - and the electromagnetic resonance provided by intentionally engineered structures. In the optical regime, the nonlinearities of graphene originated from the Pauli blocking have already been exploited for mode-locking device applications in ultrafast laser technology, whereas nonlinearities in the terahertz regime, which arise from a reduction in conductivity due to carrier heating, have only recently been confirmed experimentally. Here, we investigated two key factors for controlling nonlinear interactions of graphene with an intense terahertz field. The induced transparencies of graphene can be controlled effectively by engineering meta-atoms and/or changing the number of charge carriers through electrical gating. Additionally, nonlinear phase changes of the transmitted terahertz field can be observed by introducing the resonances of the meta-atoms.

Highlights

  • Control over nonlinear light-matter interaction in graphene/meta-atom hybrid structures are promising for the realisation of ultra-thin THz devices with controllable nonlinear optical response

  • The spectral transmittance was obtained via THz time-domain spectroscopy (THz-TDS) and the power-dependent transmittance was measured by a THz power meter

  • We have explored different mechanisms to control the nonlinear transmittance change of graphene metadevices at THz frequencies

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Summary

Introduction

Control over nonlinear light-matter interaction in graphene/meta-atom hybrid structures are promising for the realisation of ultra-thin THz devices with controllable nonlinear optical response. The incident THz photons are partly absorbed by free carriers in graphene by the intraband transitions, and the absorbed energy is quickly redistributed to other carriers in a few tens of femtoseconds by carrier-carrier scattering[18] By this process, the electron distribution becomes more gradual and is well described by the Fermi-Dirac distribution with electron temperature higher than lattice temperature, the so called “hot-carrier distribution”. The number of carriers is not substantially changed by the THz field as long as the Fermi-level is higher than half of the energy of the exciting field, but the rate of collision between electrons increases with the temperature of the electron gas It can be seen from the Kubo formula how the reduction of the momentum scattering time τ (or the increase of the collision rate) decreases the real part of conductivity and induces the nonlinear THz response. The nonlinear THz transmittance change, can be enhanced by increasing the initial conductivity of graphene or its Fermi level, equivalently

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