Abstract
The inherent switching current asymmetry (beta) pertaining to ordinary magnetic tunnel junctions (MTJs) significantly reduces the write margin of spin-transfer-torque magnetoresistive random access memory (STT-MRAM). In this letter, we report how beta can be controlled by the effective magnetostatic field ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">H</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">e</sub> ) that develops along the easy axis of the MTJs. As <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">H</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">e</sub> is varied by 24% of the effective uniaxial anisotropy field, beta measured at 100 ns is reduced from 1.51 to 1.04. The results suggest that tuning the magnetostatic offset field ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">H</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> ) arising from the dipolar coupling between adjacent ferromagnetic layers can control beta and improve the write margin of STT-MRAM.
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