Abstract
An ion shower doping technique has been applied to control the surface concentration of boron or phosphorus on a silicon wafer both for p‐well and n‐well complementary metal oxide semiconductor (CMOS) wafer processes. The dose is controllable in the range from 1012 to and has a proportional relation with the doping time. Both surface impurity concentrations of boron and phosphorus within the range from 1016 to can be obtained, the range required for CMOS wafer processing. Fabricated MOS transistors have shown the characteristics comparable to those obtained from devices fabricated with ion implanters which are conventionally used in the semiconductor industry. As a result, it has been ascertained that ion shower doping can be utilized in the CMOS wafer process.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
