Abstract

A novel approach to strain control in crystalline structures is proposed, which utilizes surface acoustic wave excitation at varying acoustic amplitudes, W. Strain variation is achieved by the dynamic pressure of the phonon flow, which is proportional to W2. Application of surface acoustic waves to strained semiconductor heterostructure caused a drastic reduction in the curvature of the atomic planes: a bent crystal became practically flat under a certain W value. Detailed data on phonon pressure effect on the curvature and the interplanar spacings were obtained by using high-resolution X-ray diffraction.

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