Control of spin relaxation in semiconductor double quantum dots

Abstract

We propose a scheme to manipulate the spin relaxation in vertically coupled semiconductor double quantum dots. Up to 12 orders of magnitude variation of the spin relaxation time can be achieved by a small gate voltage applied vertically on the double dot. Effects of different parameters such as the dot size, barrier height, interdot distance, and magnetic field on the spin relaxation are investigated in detail. The conditions to achieve a large variation is addressed.