Abstract
Selective tungsten chemical vapor deposition was carried out on three kinds of substrates: hydrogen‐terminated silicon (H‐Si), monolayer nitrided silicon (N‐Si), and thermally grown silicon oxide. X‐ray photoelectron spectroscopy (XPS) confirmed that the H‐Si substrates differ from the N‐Si substrates only by the monolayer of nitride on their surface. Field‐emission scanning electron spectroscopy and XPS showed that tungsten does not deposit on the N‐Si substrates but does deposit on the H‐Si substrates. Monolayer nitridation therefore has the potential for improving and optimizing the thin‐film preparation processes, because it provides a means for altering the surface reactivity while keeping the bulk properties unchanged.
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