Abstract
We report the selective and catalyst-free growth of Sb2Te3 and Te nanowires by thermal annealing of sputter-deposited Al–Sb–Te thin films. Sb2Te3 and Te nanowires were grown at low temperature (∼250 °C) under N2 and O2 gas atmospheres, respectively, and they were extruded spontaneously on the surfaces of Al–Sb–Te films with increasing annealing temperature.
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