Abstract
We modified the refractive index (n) of TiO2 by annealing at various temperatures to obtain a high figure of merit (FOM) for TiO2/Ag/TiO2 (45nm/17nm/45nm) multilayer films deposited on glass substrates. Unlike the as-deposited and 300°C-annealed TiO2 films, the 600°C-annealed sample was crystallized in the anatase phase. The as-deposited TiO2/Ag/as-deposited TiO2 multilayer film exhibited a transmittance of 94.6% at 550nm, whereas that of the as-deposited TiO2/Ag/600°C-annealed TiO2 (lower) multilayer film was 96.6%. At 550nm, n increased from 2.293 to 2.336 with increasing temperature. The carrier concentration, mobility, and sheet resistance varied with increasing annealing temperature. The samples exhibited smooth surfaces with a root-mean-square roughness of 0.37–1.09nm. The 600°C-annealed multilayer yielded the highest Haacke's FOM of 193.9×10−3Ω−1.
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