Control of polarity in multilayer MoTe2 field-effect transistors by channel thickness.

Abstract

In this study, electronic properties of field-effect transistors (FETs) fabricated from exfoliated MoTe2 single crystals are investigated as a function of channel thickness. The conductivity type in FETs gradually changes from n-type for thick MoTe2 layers (above ≈ 65 nm) to ambipolar behavior for intermediate MoTe2 thickness (between ≈ 60 and 15 nm) to p- type for thin layers (below ≈ 10 nm). The n-type behavior in quasi-bulk MoTe2 is attributed to doping with chlorine atoms from the TeCl4 transport agent used for the chemical vapor transport (CVT) growth of MoTe2. The change in polarity sign with decreasing channel thickness may be associated with increasing role of surface states in ultra-thin layers, which in turn influence carrier concentration and dynamics in the channel due to modulation of Schottky barrier height and band-bending at the metal/semiconductor interface.