Abstract
Post-growth annealing of uniform InAs quantum dots (QDs) grown on GaAs(0 0 1) substrates was investigated, and obtained results gave some useful information about control of QD energy level and an intermixing effect between In and Ga atoms. In particular, a wide control of photoluminescence (PL) peak energy (312 meV) and an extremely narrow PL linewidth (13 meV) were obtained from uniform QDs annealed at 700 °C. Photoluminescence properties of annealed QDs depending on anneal conditions were explained by modification of the QD structure and, an interdiffussion effect was discussed.
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