Abstract
ZnO/PEDOT:PSS diodes were produced using high aspect-ratio ZnO nanorods with diode behaviour dependent on annealing conditions.
Highlights
Zinc oxide (ZnO) is a metal-oxide semiconductor with a direct wide band gap and high exciton binding energy
ZnO nanorods were synthesized using aqueous solution methods using a single step for 24 hours
Compared with the conventional method, which refreshes the growth solution to extend the nanorods, the as-achieved nanorods using a single step showed no significant difference in SEM morphology, UV-Vis absorption spectroscopy, X-ray diffraction (XRD) patterns, and SAED diffractions
Summary
Zinc oxide (ZnO) is a metal-oxide semiconductor with a direct wide band gap and high exciton binding energy. Control of oxygen vacancies in ZnO nanorods by annealing and their influence on ZnO/PEDOT:PSS diode behaviour† The nanorods were annealed in oxygen and nitrogen and a p-type polymer poly(3,4-ethylenedioxythiophene)polystyrene sulfonate (PEDOT:PSS) was spray coated onto the top of ZnO nanorods to form a p–n junction.
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