Abstract
In Czochralski-grown (CZ) silicon single crystals, antimony (Sb) doping decreases the oxygen concentration by enhancing oxygen evaporation from the melt surface. In this study, Ar ambient pressures of around 100 Torr over the silicon melt were found to suppress evaporation of oxide species. To clarify the effect of the growth chamber ambient pressure on oxygen concentration in grown crystals, heavily Sb-doped CZ silicon crystals were grown under Ar pressures of 30, 60, and 100 Torr. Increasing the Ar pressure increases the oxygen and Sb concentrations at the melt surface. The oxygen concentration under an Ar pressure of 100 Torr was 1.2 times higher than that under 30 and 60 Torr when the solidified fractions are 0.5 or larger. The oxygen evaporation rate is controllable by gas phase transport of Sb 2O at high Ar pressures.
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