Abstract
Epitaxial strain effect has been studied for Nd0.25Sr1.75MnO4 thin films on (100) surfaces of two different isostructural (single-layered perovskite) substrates, LaSrAlO4 and LaSrGaO4. Due to the anisotropic strain in the MnO2 plane, the orientation-controlled films were stabilized with the structure consistent with that of C-type antiferromagnetic and d3x2−r2 ferro-orbital-ordered state. Measurements of highly anisotropic optical spectra show that the tensile strain in the MnO2 plane aligns ferroically the direction of d3x2−r2 orbitals parallel to the film plane, whereas compressive strain does those vertical to the film plane. These results indicate that the direction of the ferroic ordering of d3x2−r2 orbitals can be controlled by external uniaxial pressure, implying a potential for a switching device.
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