Abstract
We report on our studies of the nitrogen incorporation behavior in GaNAs bulk layers and GaInNAs quantum wells, grown by metalorganic chemical vapor deposition. By high-resolution x-ray diffraction measurements on GaNAs, we observe that the nitrogen incorporation efficiency increases with increasing tertiary-butyl-arsine flow up to a certain threshold. Results on GaInNAs quantum wells (QWs) confirm this trend. Finally, we link the optical quality of these quantum wells to the abruptness of the QWs and the nitrogen content.
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