Abstract
Growth controllabilities of morphology and wire width are systematically investigated for the InGaAs ridge quantum wires (QWRs) grown by the atomic hydrogen ( H ∗ )-assisted selective molecular beam epitaxy (MBE) growth. Detailed scanning electron microscopy (SEM), photoluminescence (PL) and magneto-transport measurements have been made. The optimal H ∗ cleaning remarkably improves the surface morphology of the InGaAs ridge structure on which QWR is formed. The geometrical width of the wire, W, can be controlled by changing the MBE growth time of the lower InAlAs barrier layer, t InAlAs. A simple relationship, W=9.5 nm/min t InAlAs min , has been obtained. Gate-dependent Shubnikov–de Haas (SdH) measurements on quantum wire transistor (QWRTr) structure having wrap gate (WPG) have indicated tight gate control with a maximum subband spacing of 15 meV .
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