Control of metal-insulator transition in (EDO-TTF)2SbF6

Abstract

We have examined the temperature dependence of optical reflectance spectra of (EDO-TTF)2SbF6 salt, and succeeded to detect the thermal hysteresis by the reflectance spectra. In order to investigate high pressure effects on the metal-insulator transition of SbF6 salt, we have performed Raman experiments under pressures up to 6 kbar. Drastic changes in the frequencies of charge sensitive C=C stretching modes suggested the pressure-induced reentrant metal-insulator-metal transition at room temperature.