Abstract
Magnetic domain wall (DW) motion induced by spin transfer torque in magnetic nanowires is of emerging technological interest for its possible applications in spintronic memory or logic devices. Co/Pd multilayered magnetic nanowires with perpendicular magnetic anisotropy were fabricated on the surfaces of Si wafers by ion-beam sputtering. The nanowires had different sized widths and pinning sites formed by an anodic oxidation method via scanning probe microscopy (SPM) with an MFM tip. The magnetic domain structure was changed by an anodic oxidation method. To discover the current-induced DW motion in the Co/Pd nanowires, we employed micromagnetic modeling based on the Landau-Lifschitz-Gilbert (LLG) equation. The split DW motions and configurations due to the edge effects of pinning site and nanowire appeared.
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